p p j u 4na6 0 / pj d 4 na 6 0 / pj p 4 na 6 0 / pj f 4na6 0 march 10,2014 - rev.00 page 1 6 00 v n - c hannel mosfet v oltage 6 0 0 v c urrent 4 a ito - 220ab - f to - 220ab to - 252aa to - 251aa f eatures ? r ds(on) , v gs @10v,i d @ 2 a < 2.4 ? high switching speed ? impr oved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case: to - 251aa , to - 252aa ,to - 220ab, ito - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? to - 251aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 252aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 220ab approx. weight : 0.06 7 ounces, 1. 9 grams ? ito - 220ab - f approx. weight : 0.068 ounce s, 2 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251aa to - 220ab ito - 220ab - f to - 252aa units drain - source voltage v ds 6 00 v gate - source voltage v gs + 30 v continuous drain current i d 4 a pulsed drain current i dm 16 a single pulse avalanche energy (note 1 ) e as 217 mj power dissipation t c =25 o c p d 77 100 33 77 w derate above 25 o c 0.6 2 0.8 0.26 0.62 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical the rmal resistance - junction to case - j unction to ambient r jc ja 1.62 110 1.25 6 2.5 3.79 120 1.62 110 o c /w ? limited only by maximum junction temperature
p p j u 4na6 0 / pj d 4 na 6 0 / pj p 4 na 6 0 / pj f 4na6 0 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test conditi on min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 6 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 3. 2 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 2 a - 1.92 2.4 zero gate voltage drain curren t i dss v ds = 6 00v,v gs =0v - 0.03 1 .0 ua gate - source leakage current i gss v gs = + 30 v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 4 a,v gs =0v - 0.8 6 1.4 v dynamic (note 4 ) total gate charge q g v ds = 4 8 0 v, i d = 4 a, v gs = 10 v (note 2 , 3 ) - 11.1 - nc gate - source c harge q gs - 3.3 - gate - drain charge q gd - 4.2 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 450 - pf output capacitance coss - 67 - reverse transfer capacitance crss - 0. 7 - turn - on delay time td (on) v dd = 30 0 v, i d = 4 a, r g = 25 (note 2 , 3 ) - 10 - ns turn - on rise time t r - 23 - turn - off delay time td (off) - 24 - turn - off fall time t f - 2 4 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 4 a maximum pulsed drain - source diode forwa rd current i sm --- - - 16 a reverse recovery time trr v gs =0v, i s = 4 a di f / dt=100a/us (note 2 ) - 4 00 - ns reverse recovery charge qrr - 1.7 - uc notes : 1. l=30mh, i as =3. 7 a, v dd = 50 v, r g = 2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially i ndependent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 4na6 0 / pj d 4 na 6 0 / pj p 4 na 6 0 / pj f 4na6 0 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. dra in current fig. 4 on - resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p j u 4na6 0 / pj d 4 na 6 0 / pj p 4 na 6 0 / pj f 4na6 0 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperatu re fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 4na6 0 / pj d 4 na 6 0 / pj p 4 na 6 0 / pj f 4na6 0 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 pju/pjd normalized transien t thermal impedance vs. pulse width fig. 14 pjp4n a6 0 normalized transient thermal impedance vs. pulse width fig. 15 pjf4na6 0 normalized transient thermal impedance vs. pulse width
p p j u 4na6 0 / pj d 4 na 6 0 / pj p 4 na 6 0 / pj f 4na6 0 march 10,2014 - rev.00 page 6 packaging information . ito - 220ab - f dimension u nit: mm to - 220 ab dimension u nit: mm to - 252aa dimension u nit: mm to - 251aa dimension u nit: mm
p p j u 4na6 0 / pj d 4 na 6 0 / pj p 4 na 6 0 / pj f 4na6 0 march 10,2014 - rev.00 page 7 part no packing code version part n o packing code package type packing type marking ver sion pj u4na60 _t0_00001 to - 251aa 80pcs / tube u4na60 halogen free pjd4na60_l2_00001 to - 252aa 3,000pcs / 13 reel d4na60 halogen free pj p4na60 _t0_00001 to - 220 ab 50pcs / tube p4na60 halogen free pj f4na60 _t0_00001 ito - 220ab - f 50pcs / tube f4na60 halogen free
p p j u 4na6 0 / pj d 4 na 6 0 / pj p 4 na 6 0 / pj f 4na6 0 march 10,2014 - rev.00 page 8 disclaimer
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